DMN100-7-F
MOSFET N-CH 30V 1.1A SC59-3
Transistors Fets Mosfets Single
TO-236-3, SC-59, SOT-23-3
Active
$0.68 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN100-7-F |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 240mOhm @ 1A, 10V |
| Vgs(th) (Max) | 3V @ 1mA |
| Gate Charge (Qg) | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) | 150 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | SC-59-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMN100-7-F by Diodes Incorporated is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 240mOhm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN100-7-F
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1A, 10V |
| Power Dissipation (Max) | 500mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
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