Diotec SemiconductorTO-261-4, TO-261AARoHS
DI2579N
BJT SOT-223 700V 1000MA
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-261-4, TO-261AA
Status
Active
$0.50 / unit (market reference)
MOQ: 10 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diotec Semiconductor |
| Model | DI2579N |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 1.25 W |
| Supplier Device Package | SOT-223 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DI2579N by Diotec Semiconductor is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 1.25 W |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 350mA |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 350mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
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