Diotec Semiconductor8-PowerTDFNRoHS
DI036N20PQ
MOSFET N-CH 200V 36A 8QFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerTDFN
Status
Active
$2.41 / unit (market reference)
MOQ: 5000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diotec Semiconductor |
| Model | DI036N20PQ |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 40mOhm @ 28A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 145 nC @ 10 V |
| Input Capacitance (Ciss) | 4270 pF @ 30 V |
| Power Dissipation (Max) | 125W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-QFN (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DI036N20PQ by Diotec Semiconductor is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 40mOhm @ 28A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 28A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
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