CTLDM8120-M621H BK
MOSFET P-CH 20V 950MA TLM621H
Transistors Fets Mosfets Single
6-XFDFN Exposed Pad
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Central Semiconductor Corp |
| Model | CTLDM8120-M621H BK |
| Package / Case | 6-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 150mOhm @ 950mA, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 3.56 nC @ 4.5 V |
| Input Capacitance (Ciss) | 200 pF @ 16 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | TLM621H |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
CTLDM8120-M621H BK by Central Semiconductor Corp is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-XFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 150mOhm @ 950mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CTLDM8120-M621H BK
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | 8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 950mA, 4.5V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 3.56 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 16 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Ta) |
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