CTLDM303N-M832DS TR
MOSFET 2N-CH 30V 3.6A TLM832DS
Transistors Fets Mosfets Arrays
8-TDFN Exposed Pad
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Central Semiconductor Corp |
| Model | CTLDM303N-M832DS TR |
| Package / Case | 8-TDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 40mOhm @ 1.8A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 13nC @ 4.5V |
| Input Capacitance (Ciss) | 590pF @ 10V |
| Power Dissipation (Max) | 1.65W |
| Supplier Device Package | TLM832DS |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
CTLDM303N-M832DS TR by Central Semiconductor Corp is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 40mOhm @ 1.8A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CTLDM303N-M832DS TR
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 1.65W |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 1.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
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