CSD16301Q2
MOSFET N-CH 25V 5A 6SON
Transistors Fets Mosfets Single
6-SMD, Flat Leads
NexFET™
Active
$0.65 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD16301Q2 |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 25 V |
| Rds On (Max) | 24mOhm @ 4A, 8V |
| Vgs(th) (Max) | 1.55V @ 250µA |
| Gate Charge (Qg) | 2.8 nC @ 4.5 V |
| Input Capacitance (Ciss) | 340 pF @ 12.5 V |
| Power Dissipation (Max) | 2.3W (Ta) |
| Drive Voltage | 3V, 8V |
| Supplier Device Package | 6-SON |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD16301Q2 by Texas Instruments is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 24mOhm @ 4A, 8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD16301Q2
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +10V, -8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.55V @ 250µA |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 4A, 8V |
| Power Dissipation (Max) | 2.3W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 12.5 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
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