CP773-CMPDM302PH-CT
MOSFET P-CH 30V 2.4A DIE
Transistors Fets Mosfets Single
Die
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Central Semiconductor Corp |
| Model | CP773-CMPDM302PH-CT |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 91mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) | 1.4V @ 250µA |
| Gate Charge (Qg) | 9.6 nC @ 5 V |
| Input Capacitance (Ciss) | 800 pF @ 10 V |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
CP773-CMPDM302PH-CT by Central Semiconductor Corp is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 91mOhm @ 1.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CP773-CMPDM302PH-CT
Alternatives & Replacements
View All →EPC2037
GANFET N-CH 100V 1.7A DIE
EPC2036
GANFET N-CH 100V 1.7A DIE
EPC2212
GANFET N-CH 100V 18A DIE
EPC2038
GANFET N-CH 100V 500MA DIE
EPC2016C
GANFET N-CH 100V 18A DIE
EPC2014C
GANFET N-CH 40V 10A DIE OUTLINE
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | 12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 1.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.