Central Semiconductor CorpDieRoHS
CP647-MJ11013-CT
TRANS PNP DARL 30A 90V DIE
Category
Subcategory
Transistors Bipolar Bjt Single
Package
Die
Status
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Central Semiconductor Corp |
| Model | CP647-MJ11013-CT |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CP647-MJ11013-CT by Central Semiconductor Corp is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 300mA, 30A |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30A, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
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