Central Semiconductor CorpDieRoHS
CP307-MPSA13-WN
POWER TRANSISTOR NPN DIE
Category
Subcategory
Transistors Bipolar Bjt Single
Package
Die
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Central Semiconductor Corp |
| Model | CP307-MPSA13-WN |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 625 mW |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
CP307-MPSA13-WN by Central Semiconductor Corp is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 625 mW |
| Transistor Type | NPN - Darlington |
| Frequency - Transition | 125MHz |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
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