CP188-BC108-CT
TRANSISTOR LNA NPN
Transistors Bipolar Bjt Single
Die
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Central Semiconductor Corp |
| Model | CP188-BC108-CT |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power Dissipation (Max) | 600 mW |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
CP188-BC108-CT by Central Semiconductor Corp is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CP188-BC108-CT
Alternatives & Replacements
View All →LS3550SC DIE
HIGHER CURRENT, SINGLE NPN TRANS
LS3550SB DIE
HIGHER CURRENT, SINGLE NPN TRANS
LS3550SA DIE
HIGHER CURRENT, SINGLE NPN TRANS
CP305-2N3019-CT20
TRANS NPN 1=20PCS
CP527-2N6299-CT5
TRANS PNP 1=5PCS
CP710V-MPSA92-CT20
TRANS PNP 1=20PCS
All Technical Specifications
| Power - Max | 600 mW |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector (Ic) (Max) | 200 mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.