CP147-MJ11016-WN
IC TRANSISTOR
Transistors Bipolar Bjt Single
Die
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Central Semiconductor Corp |
| Model | CP147-MJ11016-WN |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power Dissipation (Max) | 200 W |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
CP147-MJ11016-WN by Central Semiconductor Corp is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CP147-MJ11016-WN
Alternatives & Replacements
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CP305-2N3019-CT20
TRANS NPN 1=20PCS
CP527-2N6299-CT5
TRANS PNP 1=5PCS
CP710V-MPSA92-CT20
TRANS PNP 1=20PCS
All Technical Specifications
| Power - Max | 200 W |
| Transistor Type | NPN - Darlington |
| Frequency - Transition | 4MHz |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 300mA, 30A |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
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