Comchip Technology8-PowerTDFNRoHS
CMS16P06H8-HF
MOSFET P-CH 60V 5A/16A DFN5X6
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerTDFN
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Comchip Technology |
| Model | CMS16P06H8-HF |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 48mOhm @ 8A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 22 nC @ 10 V |
| Input Capacitance (Ciss) | 1256 pF @ 30 V |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | DFN5x6 (PR-PAK) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
CMS16P06H8-HF by Comchip Technology is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 48mOhm @ 8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 8A, 10V |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1256 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 16A (Tc) |
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