Comchip Technology8-PowerTDFNRoHS
CMS100N04H8-HF
MOSFET N-CH 40V 100A DFN5X6
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerTDFN
Status
Obsolete
Price available on request
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Comchip Technology |
| Model | CMS100N04H8-HF |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 2.8mOhm @ 25A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 44.4 nC @ 4.5 V |
| Input Capacitance (Ciss) | 4940 pF @ 25 V |
| Power Dissipation (Max) | 2W (Ta), 135W (Tc) |
| Supplier Device Package | DFN5x6 (PR-PAK) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
CMS100N04H8-HF by Comchip Technology is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.8mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| Power Dissipation (Max) | 2W (Ta), 135W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 44.4 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4940 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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