BUJ303B,127
NOW WEEN - BUJ303B - POWER BIPOL
Transistors Bipolar Bjt Single
TO-220-3
Active
$0.36 / unit (market reference)
MOQ: 687 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BUJ303B,127 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 100 W |
| Supplier Device Package | TO-220AB |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BUJ303B,127 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BUJ303B,127
Alternatives & Replacements
View All →BD243BTU
POWER BIPOLAR TRANSISTOR, 6A, 80
TIP32CTU
POWER BIPOLAR TRANSISTOR
TIP31BG
TRANS NPN 80V 3A TO220AB
KSC5402DTTU
POWER BIPOLAR TRANSISTOR, 2A, 45
TIP31CTU
POWER BIPOLAR TRANSISTOR
TIP32C
TRANS PNP 100V 3A TO220AB
All Technical Specifications
| Power - Max | 100 W |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 3A |
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 23 @ 800mA, 3V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.