BSS816NWH6327XTSA1
MOSFET N-CH 20V 1.4A SOT323-3
Transistors Fets Mosfets Single
SC-70, SOT-323
OptiMOS™
Active
$0.42 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSS816NWH6327XTSA1 |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 160mOhm @ 1.4A, 2.5V |
| Vgs(th) (Max) | 0.75V @ 3.7µA |
| Gate Charge (Qg) | 0.6 nC @ 2.5 V |
| Input Capacitance (Ciss) | 180 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Drive Voltage | 1.8V, 2.5V |
| Supplier Device Package | SOT-323 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSS816NWH6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 160mOhm @ 1.4A, 2.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSS816NWH6327XTSA1
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MOSFET P-CH 50V 70MA 3MCP
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MOSFET N-CH 60V 240MA SOT323
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 0.75V @ 3.7µA |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.4A, 2.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 2.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
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