PC
Infineon TechnologiesSC-70, SOT-323RoHS

BSS223PWH6327XTSA1

MOSFET P-CH 20V 390MA SOT323-3

BSS223PWH6327XTSA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

SC-70, SOT-323

Series

OptiMOS™

Status

Active

$0.46 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelBSS223PWH6327XTSA1
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)1.2Ohm @ 390mA, 4.5V
Vgs(th) (Max)1.2V @ 1.5µA
Gate Charge (Qg)0.62 nC @ 4.5 V
Input Capacitance (Ciss)56 pF @ 15 V
Power Dissipation (Max)250mW (Ta)
Drive Voltage2.5V, 4.5V
Supplier Device PackageSOT-323
RoHSRoHS
Part StatusActive

Application & Notes

BSS223PWH6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.2Ohm @ 390mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 1.5µA
Rds On (Max) @ Id, Vgs1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max)250mW (Ta)
Gate Charge (Qg) (Max) @ Vgs0.62 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds56 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C390mA (Ta)

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