Infineon TechnologiesTO-236-3, SC-59, SOT-23-3RoHS
BSS169H6327XTSA1
MOSFET N-CH 100V 170MA SOT23-3
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-236-3, SC-59, SOT-23-3
Series
SIPMOS®
Status
Active
Datasheet
$0.61 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSS169H6327XTSA1 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 6Ohm @ 170mA, 10V |
| Vgs(th) (Max) | 1.8V @ 50µA |
| Gate Charge (Qg) | 2.8 nC @ 7 V |
| Input Capacitance (Ciss) | 68 pF @ 25 V |
| Power Dissipation (Max) | 360mW (Ta) |
| Drive Voltage | 0V, 10V |
| Supplier Device Package | PG-SOT23 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSS169H6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6Ohm @ 170mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSS169H6327XTSA1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Depletion Mode |
| Vgs(th) (Max) @ Id | 1.8V @ 50µA |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| Power Dissipation (Max) | 360mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 7 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 68 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
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