Rohm SemiconductorModuleRoHS
BSM300C12P3E201
SICFET N-CH 1200V 300A MODULE
Category
Subcategory
Transistors Fets Mosfets Single
Package
Module
Status
Active
$625.50 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | BSM300C12P3E201 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Vgs(th) (Max) | 5.6V @ 80mA |
| Input Capacitance (Ciss) | 15000 pF @ 10 V |
| Power Dissipation (Max) | 1360W (Tc) |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSM300C12P3E201 by Rohm Semiconductor is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +22V, -4V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 5.6V @ 80mA |
| Power Dissipation (Max) | 1360W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
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