Rohm SemiconductorModuleRoHS
BSM180C12P2E202
SICFET N-CH 1200V 204A MODULE
Category
Subcategory
Transistors Fets Mosfets Single
Package
Module
Status
Active
Datasheet
$312.40 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | BSM180C12P2E202 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Vgs(th) (Max) | 4V @ 35.2mA |
| Input Capacitance (Ciss) | 20000 pF @ 10 V |
| Power Dissipation (Max) | 1360W (Tc) |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSM180C12P2E202 by Rohm Semiconductor is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSM180C12P2E202
Alternatives & Replacements
View All →All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +22V, -6V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Power Dissipation (Max) | 1360W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
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