PC
NXP USA Inc.TO-236-3, SC-59, SOT-23-3RoHS

BSH205,215

MOSFET P-CH 12V 750MA TO236AB

BSH205,215 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Obsolete

$0.18 / unit (market reference)

MOQ: 1697 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelBSH205,215
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)400mOhm @ 430mA, 4.5V
Vgs(th) (Max)680mV @ 1mA
Gate Charge (Qg)3.8 nC @ 4.5 V
Input Capacitance (Ciss)200 pF @ 9.6 V
Power Dissipation (Max)417mW (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device PackageSOT-23 (TO-236AB)
RoHSRoHS
Part StatusObsolete

Application & Notes

BSH205,215 by NXP USA Inc. is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 400mOhm @ 430mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id680mV @ 1mA
Rds On (Max) @ Id, Vgs400mOhm @ 430mA, 4.5V
Power Dissipation (Max)417mW (Ta)
Gate Charge (Qg) (Max) @ Vgs3.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 9.6 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C750mA (Ta)

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