BSC010NE2LSIATMA1
MOSFET N-CH 25V 38A/100A TDSON
Transistors Fets Mosfets Single
8-PowerTDFN
OptiMOS™
Active
$2.09 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSC010NE2LSIATMA1 |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 25 V |
| Rds On (Max) | 1.05mOhm @ 30A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 59 nC @ 10 V |
| Input Capacitance (Ciss) | 4200 pF @ 12 V |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | PG-TDSON-8-7 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSC010NE2LSIATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.05mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSC010NE2LSIATMA1
Alternatives & Replacements
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.05mOhm @ 30A, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 100A (Tc) |
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