BFP196E6327HTSA1
RF TRANS NPN 12V 7.5GHZ SOT143-4
Transistors Bipolar Bjt Rf
TO-253-4, TO-253AA
Active
$0.53 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BFP196E6327HTSA1 |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 700mW |
| Supplier Device Package | PG-SOT-143-3D |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BFP196E6327HTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-253-4, TO-253AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BFP196E6327HTSA1
Alternatives & Replacements
View All →2SC5454-T1-A
RF SMALL SIGNAL BIPOLAR TRANS
2SC5455-T1-A
2SC5455 - MD
2SC4095-T1-A
NPN TRANSISTOR
2SC4957-T1-A
SMALL SIGNAL BIPOLAR TRANSISTOR
2SC4093-T1-A
RF 0.1A, ULTRA HIGH FREQ BAND
NE85639-T1-A
SAME AS 2SC4093 NPN SILICON AMPL
All Technical Specifications
| Gain | 10.5dB ~ 16.5dB |
| Power - Max | 700mW |
| Transistor Type | NPN |
| Frequency - Transition | 7.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz |
| Current - Collector (Ic) (Max) | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
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