Infineon TechnologiesTO-261-4, TO-261AARoHS
BFN39E6327HTSA1
TRANS PNP 300V 0.2A SOT-223
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-261-4, TO-261AA
Status
Obsolete
Datasheet
$0.09 / unit (market reference)
MOQ: 3216 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BFN39E6327HTSA1 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1.5 W |
| Supplier Device Package | PG-SOT223-4 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BFN39E6327HTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BFN39E6327HTSA1
Alternatives & Replacements
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BCP5416H6433XTMA1
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Infineon TechnologiesStockTO-261-4, TO-261AA
BCP54H6327XTSA1
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All Technical Specifications
| Power - Max | 1.5 W |
| Transistor Type | PNP |
| Frequency - Transition | 100MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector (Ic) (Max) | 200 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
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