BFN38H6327XTSA1
TRANS NPN 300V 0.2A SOT223
Transistors Bipolar Bjt Single
TO-261-4, TO-261AA
Not For New Designs
$0.13 / unit (market reference)
MOQ: 2396 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BFN38H6327XTSA1 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1.5 W |
| Supplier Device Package | PG-SOT223-4 |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
BFN38H6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BFN38H6327XTSA1
Alternatives & Replacements
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BCP5416H6433XTMA1
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BCP54H6327XTSA1
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All Technical Specifications
| Power - Max | 1.5 W |
| Transistor Type | NPN |
| Frequency - Transition | 70MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector (Ic) (Max) | 200 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
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