BCR583E6327HTSA1
TRANS PREBIAS PNP 0.33W SOT23-3
Transistors Bipolar Bjt Single Pre Biased
TO-236-3, SC-59, SOT-23-3
Not For New Designs
$0.06 / unit (market reference)
MOQ: 18000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BCR583E6327HTSA1 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 330 mW |
| Supplier Device Package | PG-SOT23 |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
BCR583E6327HTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BCR583E6327HTSA1
Alternatives & Replacements
View All →MMUN2215LT1G
TRANS PREBIAS NPN 50V SOT23-3
MMUN2238LT1G
TRANS PREBIAS NPN 50V SOT23-3
MUN2211T3G
TRANS PREBIAS NPN 50V 100MA SC59
DDTD113ZC-7-F
TRANS PREBIAS NPN 200MW SOT23-3
SMMUN2214LT1G
TRANS PREBIAS NPN 50V SOT23
DDTC143ZCA-7-F
TRANS PREBIAS NPN 200MW SOT23-3
All Technical Specifications
| Power - Max | 330 mW |
| Transistor Type | PNP - Pre-Biased |
| Resistor - Base (R1) | 10 kOhms |
| Frequency - Transition | 150 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.