Nexperia USA Inc.6-XFDFN Exposed PadRoHS
BCM847QASZ
TRANS 2NPN 45V 0.1A DFN1010B-6
Category
Subcategory
Transistors Bipolar Bjt Arrays
Package
6-XFDFN Exposed Pad
Series
Automotive, AEC-Q101
Status
Active
Datasheet
$0.42 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
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Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | BCM847QASZ |
| Package / Case | 6-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 350mW |
| Supplier Device Package | DFN1010B-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BCM847QASZ by Nexperia USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-XFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BCM847QASZ
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All Technical Specifications
| Power - Max | 350mW |
| Transistor Type | NPN, PNP |
| Frequency - Transition | 100MHz |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
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