Infineon TechnologiesTO-236-3, SC-59, SOT-23-3RoHS
BC860BE6327HTSA1
TRANS PNP 45V 0.1A SOT-23
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-236-3, SC-59, SOT-23-3
Status
Not For New Designs
Datasheet
$0.02 / unit (market reference)
MOQ: 15000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BC860BE6327HTSA1 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 330 mW |
| Supplier Device Package | PG-SOT23 |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
BC860BE6327HTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BC860BE6327HTSA1
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All Technical Specifications
| Power - Max | 330 mW |
| Transistor Type | PNP |
| Frequency - Transition | 250MHz |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
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