Infineon Technologies8-PowerTDFNRoHS
AUIRFN7110TR
MOSFET N-CH 100V 58A 8PQFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerTDFN
Series
Automotive, AEC-Q101, HEXFET®
Status
Obsolete
Datasheet
$1.20 / unit (market reference)
MOQ: 251 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | AUIRFN7110TR |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 14.5mOhm @ 35A, 10V |
| Vgs(th) (Max) | 4V @ 100µA |
| Gate Charge (Qg) | 74 nC @ 10 V |
| Input Capacitance (Ciss) | 3050 pF @ 25 V |
| Power Dissipation (Max) | 4.3W (Ta), 125W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-PQFN (5x6) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
AUIRFN7110TR by Infineon Technologies is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 14.5mOhm @ 35A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for AUIRFN7110TR
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 35A, 10V |
| Power Dissipation (Max) | 4.3W (Ta), 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
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