AUIRFN7107TR
AUIRFN7107 - 75V-100V N-CHANNEL
Transistors Fets Mosfets Single
8-PowerTDFN
HEXFET®
Active
$1.13 / unit (market reference)
MOQ: 265 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | AUIRFN7107TR |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 75 V |
| Rds On (Max) | 8.5mOhm @ 45A, 10V |
| Vgs(th) (Max) | 4V @ 100µA |
| Gate Charge (Qg) | 77 nC @ 10 V |
| Input Capacitance (Ciss) | 3001 pF @ 25 V |
| Power Dissipation (Max) | 4.4W (Ta), 125W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | PQFN (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
AUIRFN7107TR by Rochester Electronics, LLC is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.5mOhm @ 45A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for AUIRFN7107TR
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 45A, 10V |
| Power Dissipation (Max) | 4.4W (Ta), 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 75 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3001 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 75A (Tc) |
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