APT50GS60BRDQ2G
IGBT 600V 93A 415W TO247
Transistors Igbts Single
TO-247-3
Thunderbolt IGBT®
Active
$11.55 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APT50GS60BRDQ2G |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 415 W |
| Supplier Device Package | TO-247 [B] |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
APT50GS60BRDQ2G by Microchip Technology is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APT50GS60BRDQ2G
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All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 235 nC |
| Power - Max | 415 W |
| Test Condition | 400V, 40A, 4.7Ohm, 15V |
| Switching Energy | 755µJ (off) |
| Td (on/off) @ 25°C | 16ns/225ns |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 50A |
| Reverse Recovery Time (trr) | 25 ns |
| Current - Collector (Ic) (Max) | 93 A |
| Current - Collector Pulsed (Icm) | 195 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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