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Alpha & Omega Semiconductor Inc.TO-262-3 Long Leads, I²Pak, TO-262AARoHS

AOWF412

MOSFET N-CH 100V 7.8A/30A

Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

SDMOS™

Status

Active

$1.15 / unit (market reference)

MOQ: 1000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAOWF412
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)15.8mOhm @ 20A, 10V
Vgs(th) (Max)3.8V @ 250µA
Gate Charge (Qg)54 nC @ 10 V
Input Capacitance (Ciss)3220 pF @ 50 V
Power Dissipation (Max)2.1W (Ta), 33W (Tc)
Drive Voltage7V, 10V
Supplier Device PackageTO-262F
RoHSRoHS
Part StatusActive

Application & Notes

AOWF412 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15.8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.8V @ 250µA
Rds On (Max) @ Id, Vgs15.8mOhm @ 20A, 10V
Power Dissipation (Max)2.1W (Ta), 33W (Tc)
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds3220 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C7.8A (Ta), 30A (Tc)

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