PartsCubeGlobal
Alpha & Omega Semiconductor Inc.TO-262-3 Long Leads, I²Pak, TO-262AARoHS

AOWF296

MOSFET N-CH 100V 37A TO262F

Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

AlphaSGT™

Status

Active

$1.05 / unit (market reference)

MOQ: 1000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAOWF296
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)9.7mOhm @ 20A, 10V
Vgs(th) (Max)3.4V @ 250µA
Gate Charge (Qg)52 nC @ 10 V
Input Capacitance (Ciss)2785 pF @ 50 V
Power Dissipation (Max)26W (Tc)
Drive Voltage6V, 10V
Supplier Device PackageTO-262F
RoHSRoHS
Part StatusActive

Application & Notes

AOWF296 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.7mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

IPI45N06S409AKSA2Rochester Electronics, LLC

MOSFET N-CH 60V 45A TO262-3

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.4V @ 250µA
Rds On (Max) @ Id, Vgs9.7mOhm @ 20A, 10V
Power Dissipation (Max)26W (Tc)
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds2785 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C37A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.