PartsCubeGlobal
Alpha & Omega Semiconductor Inc.TO-262-3 Long Leads, I²Pak, TO-262AARoHS

AOW15S60

MOSFET N-CH 600V 15A TO262

Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

aMOS™

Status

Not For New Designs

$1.44 / unit (market reference)

MOQ: 1000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAOW15S60
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)290mOhm @ 7.5A, 10V
Vgs(th) (Max)3.8V @ 250µA
Gate Charge (Qg)15.6 nC @ 10 V
Input Capacitance (Ciss)717 pF @ 100 V
Power Dissipation (Max)208W (Tc)
Drive Voltage10V
Supplier Device PackageTO-262
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

AOW15S60 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 290mOhm @ 7.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

IPI45N06S409AKSA2Rochester Electronics, LLC

MOSFET N-CH 60V 45A TO262-3

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.8V @ 250µA
Rds On (Max) @ Id, Vgs290mOhm @ 7.5A, 10V
Power Dissipation (Max)208W (Tc)
Gate Charge (Qg) (Max) @ Vgs15.6 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds717 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C15A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.