Alpha & Omega Semiconductor Inc.TO-220-3RoHS
AOT412
MOSFET N-CH 100V 8.2A/60A TO220
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-220-3
Series
SDMOS™
Status
Not For New Designs
$0.92 / unit (market reference)
MOQ: 1000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Alpha & Omega Semiconductor Inc. |
| Model | AOT412 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 15.8mOhm @ 20A, 10V |
| Vgs(th) (Max) | 3.8V @ 250µA |
| Gate Charge (Qg) | 54 nC @ 10 V |
| Input Capacitance (Ciss) | 3220 pF @ 50 V |
| Power Dissipation (Max) | 2.6W (Ta), 150W (Tc) |
| Drive Voltage | 7V, 10V |
| Supplier Device Package | TO-220 |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
AOT412 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15.8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 20A, 10V |
| Power Dissipation (Max) | 2.6W (Ta), 150W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 60A (Tc) |
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