Alpha & Omega Semiconductor Inc.8-DIP (0.300", 7.62mm)RoHS
AOP609
MOSFET N/P-CH 60V 8DIP
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-DIP (0.300", 7.62mm)
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Alpha & Omega Semiconductor Inc. |
| Model | AOP609 |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) | 60mOhm @ 4.7A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 7nC @ 10V |
| Input Capacitance (Ciss) | 570pF @ 30V |
| Power Dissipation (Max) | 2.5W |
| Supplier Device Package | 8-PDIP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
AOP609 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-DIP (0.300", 7.62mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 60mOhm @ 4.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 2.5W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 30V |
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