Alpha & Omega Semiconductor Inc.8-PowerVDFNRoHS
AONS660A70F
MOSFET N-CH 700V 1.7A/9.6A 8DFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerVDFN
Series
aMOS5™
Status
Active
$1.84 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Alpha & Omega Semiconductor Inc. |
| Model | AONS660A70F |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 700 V |
| Rds On (Max) | 660mOhm @ 2.5A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) | 900 pF @ 100 V |
| Power Dissipation (Max) | 4.1W (Ta), 138W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-DFN-EP (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
AONS660A70F by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 660mOhm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.5A, 10V |
| Power Dissipation (Max) | 4.1W (Ta), 138W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta), 9.6A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.