Alpha & Omega Semiconductor Inc.6-WFDFN Exposed PadRoHS
AON5802B
MOSFET 2N-CH 30V 7.2A 6DFN
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-WFDFN Exposed Pad
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Alpha & Omega Semiconductor Inc. |
| Model | AON5802B |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 19mOhm @ 7A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 24nC @ 10V |
| Input Capacitance (Ciss) | 1150pF @ 15V |
| Power Dissipation (Max) | 1.6W |
| Supplier Device Package | 6-DFN-EP (2x5) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
AON5802B by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 19mOhm @ 7A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Power - Max | 1.6W |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A |
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