Rochester Electronics, LLC6-WFDFN Exposed PadRoHS
FDMW2512NZ
SMALL SIGNAL N-CHANNEL MOSFET
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-WFDFN Exposed Pad
Series
PowerTrench®
Status
Active
$0.22 / unit (market reference)
MOQ: 1374 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMW2512NZ |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 26mOhm @ 7.2A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 13nC @ 10V |
| Input Capacitance (Ciss) | 740pF @ 15V |
| Power Dissipation (Max) | 800mW (Ta) |
| Supplier Device Package | 6-MLP (2x5) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDMW2512NZ by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 26mOhm @ 7.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Standard |
| Power - Max | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.