Alpha & Omega Semiconductor Inc.6-UDFN Exposed PadRoHS
AON2812
MOSFET 2N-CH 30V 4.5A
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-UDFN Exposed Pad
Series
AlphaMOS
Status
Active
$0.16 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Alpha & Omega Semiconductor Inc. |
| Model | AON2812 |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 37mOhm @ 2A, 10V |
| Vgs(th) (Max) | 1.4V @ 250µA |
| Gate Charge (Qg) | 10nC @ 10V |
| Input Capacitance (Ciss) | 235pF @ 15V |
| Power Dissipation (Max) | 2.5W |
| Supplier Device Package | 6-DFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
AON2812 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 37mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 2.5W |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
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