What is the minimum order quantity for A3G26H200W17SR3?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 250 pcs.

How long does shipping take for A3G26H200W17SR3?

Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

Are your electronic components genuine and authentic?

Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for A3G26H200W17SR3?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for A3G26H200W17SR3?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

NXP USA Inc.NI-780S-4S2SRoHS

A3G26H200W17SR3

AIRFAST RF POWER GAN TRANSISTOR,

Parameters

Parameter	Value
Brand	NXP USA Inc.
Model	A3G26H200W17SR3
Package / Case	NI-780S-4S2S
Supplier Device Package	NI-780S-4S2S
RoHS	RoHS
Part Status	Active

Application & Notes

A3G26H200W17SR3 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The NI-780S-4S2S package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.