AIRFAST RF POWER GAN TRANSISTOR,
Transistors Fets Mosfets Rf
NI-780S-4L
Active
$209.85 / unit (market reference)
MOQ: 250 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | A3G18D510-04SR3 |
| Package / Case | NI-780S-4L |
| Supplier Device Package | NI-780S-4L |
| RoHS | RoHS |
| Part Status | Active |
A3G18D510-04SR3 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The NI-780S-4L package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
RF POWER N-CHANNEL, MOSFET
RF FET GAN 330W 50V 2500MHZ
POWER, N-CHANNEL, MOSFET
RF MOSFET LDMOS DL 50V NI780S-4L
TRANS LDMOS 600W 400 MHZ 65V
RF REFERENCE CIRCUIT 300W 2400MH
| Gain | 16dB |
| Frequency | 1.805GHz ~ 2.2GHz |
| Current - Test | 250 mA |
| Power - Output | 56W |
| Voltage - Test | 48 V |
| Voltage - Rated | 125 V |
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