MOSFET P-CH 50V 70MA 3CP

Transistors Fets Mosfets Single
TO-236-3, SC-59, SOT-23-3
Obsolete
$0.07 / unit (market reference)
MOQ: 4121 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | 5LP01C-TB-E |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 50 V |
| Rds On (Max) | 23Ohm @ 40mA, 4V |
| Gate Charge (Qg) | 1.4 nC @ 10 V |
| Input Capacitance (Ciss) | 7.4 pF @ 10 V |
| Power Dissipation (Max) | 250mW (Ta) |
| Drive Voltage | 1.5V, 4V |
| Supplier Device Package | SC-59-3/CP3 |
| RoHS | RoHS |
| Part Status | Obsolete |
5LP01C-TB-E by onsemi is an N-channel power MOSFET rated at 50 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 23Ohm @ 40mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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| FET Type | P-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 23Ohm @ 40mA, 4V |
| Power Dissipation (Max) | 250mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.4 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 70mA (Ta) |
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