3N164 DIE
P-CHANNEL, SINGLE ENHANCEMENT MO
Transistors Fets Mosfets Single
Die
Active
$1.22 / unit (market reference)
MOQ: 400 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Linear Integrated Systems, Inc. |
| Model | 3N164 DIE |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 300Ohm @ 100µA, 20V |
| Vgs(th) (Max) | 5V @ 10µA |
| Input Capacitance (Ciss) | 3500 pF @ 15 V |
| Drive Voltage | 20V |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
3N164 DIE by Linear Integrated Systems, Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300Ohm @ 100µA, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 3N164 DIE
Alternatives & Replacements
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GANFET N-CH 100V 1.7A DIE
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EPC2038
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EPC2016C
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GANFET N-CH 40V 10A DIE OUTLINE
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | -6.5V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 10µA |
| Rds On (Max) @ Id, Vgs | 300Ohm @ 100µA, 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 50mA |
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