PC
onsemiTO-236-3, SC-59, SOT-23-3RoHS

3LP01C-TB-H

MOSFET P-CH 30V 100MA 3CP

3LP01C-TB-H by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Obsolete

$0.07 / unit (market reference)

MOQ: 4121 pcs

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Parameters

ParameterValue
Brandonsemi
Model3LP01C-TB-H
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)10.4Ohm @ 50mA, 4V
Gate Charge (Qg)1.43 nC @ 10 V
Input Capacitance (Ciss)7.5 pF @ 10 V
Power Dissipation (Max)250mW (Ta)
Drive Voltage1.5V, 4V
Supplier Device PackageSC-59-3/CP3
RoHSRoHS
Part StatusObsolete

Application & Notes

3LP01C-TB-H by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10.4Ohm @ 50mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs10.4Ohm @ 50mA, 4V
Power Dissipation (Max)250mW (Ta)
Gate Charge (Qg) (Max) @ Vgs1.43 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds7.5 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)

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