Rochester Electronics, LLCSC-81RoHS
3LN01SS-TL-E
N-CHANNEL SILICON MOSFET
Category
Subcategory
Transistors Fets Mosfets Single
Package
SC-81
Status
Active
Datasheet
$0.07 / unit (market reference)
MOQ: 3435 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 3LN01SS-TL-E |
| Package / Case | SC-81 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 3.7Ohm @ 80mA, 4V |
| Gate Charge (Qg) | 1.58 nC @ 10 V |
| Input Capacitance (Ciss) | 7000 pF @ 10 V |
| Power Dissipation (Max) | 150mW (Ta) |
| Drive Voltage | 1.5V, 4V |
| Supplier Device Package | SC-81 (SSFP) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
3LN01SS-TL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-81 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.7Ohm @ 80mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 3LN01SS-TL-E
Alternatives & Replacements
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Rochester Electronics, LLCStockSC-81
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 80mA, 4V |
| Power Dissipation (Max) | 150mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 1.58 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
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