PC
Rohm SemiconductorHRTRoHS

2SD2096T114E

TRANS NPN 60V 3A HRT/TO-220FP

2SD2096T114E by Rohm Semiconductor
Subcategory

Transistors Bipolar Bjt Single

Package

HRT

Status

Obsolete

$1.16 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRohm Semiconductor
Model2SD2096T114E
Package / CaseHRT
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
Power Dissipation (Max)1.8 W
Supplier Device PackageHRT
RoHSRoHS
Part StatusObsolete

Application & Notes

2SD2096T114E by Rohm Semiconductor is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The HRT package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max1.8 W
Transistor TypeNPN
Frequency - Transition8MHz
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Voltage - Collector Emitter Breakdown (Max)60 V

Request a Quote

Submit your quantity and details — we will reply within 24 hours.