Panasonic Electronic ComponentsTO-225AA, TO-126-3RoHS
2SD2018
TRANS NPN DARL 60V 1A TO-126
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-225AA, TO-126-3
Status
Obsolete
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Panasonic Electronic Components |
| Model | 2SD2018 |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 5 W |
| Supplier Device Package | TO-126B-A1 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SD2018 by Panasonic Electronic Components is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-225AA, TO-126-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SD2018
Alternatives & Replacements
View All →Rochester Electronics, LLCStockTO-225AA, TO-126-3
KSB772YSTU
SMALL SIGNAL BIPOLAR TRANSISTOR,
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Rochester Electronics, LLCStockTO-225AA, TO-126-3
BD681STU-ON
POWER BIPOLAR TRANSISTOR
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Rochester Electronics, LLCStockTO-225AA, TO-126-3
MJE182STU
POWER BIPOLAR TRANSISTOR
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onsemiStockTO-225AA, TO-126-3
2SB1143S
TRANS PNP 50V 4A TO-126ML
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Rochester Electronics, LLCStockTO-225AA, TO-126-3
KSD882YS
SMALL SIGNAL BIPOLAR TRANSISTOR,
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Rochester Electronics, LLCStockTO-225AA, TO-126-3
MJE200G
TRANS NPN 40V 5A TO225AA
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All Technical Specifications
| Power - Max | 5 W |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6500 @ 1A, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
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