2SD1111-AA
2SD1111 - NPN EPITAXIAL PLANAR S
Transistors Bipolar Bjt Single
TO-226-3, TO-92-3 (TO-226AA)
Active
$0.12 / unit (market reference)
MOQ: 2404 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2SD1111-AA |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 600 mW |
| Supplier Device Package | 3-NP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2SD1111-AA by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SD1111-AA
Alternatives & Replacements
View All →SS9014DBU
0.1A, 45V, NPN, TO-92
SS9013GBU
TRANS NPN 20V 500MA TO92-3
KSC945YBU
SMALL SIGNAL BIPOLAR TRANSISTOR,
KSC945GBU
TRANS NPN 50V 150MA TO92-3
PN100
TRANS NPN 45V 500MA TO92-3
SS9013HBU
TRANS NPN 20V 500MA TO92-3
All Technical Specifications
| Power - Max | 600 mW |
| Transistor Type | NPN - Darlington |
| Frequency - Transition | 200MHz |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 100µA, 100mA |
| Current - Collector (Ic) (Max) | 700 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 50mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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