PC
Rochester Electronics, LLCTO-226-3, TO-92-3 (TO-226AA)RoHS

2SC1213AB-E

0.5A, 50V, NPN

2SC1213AB-E by Rochester Electronics, LLC
Subcategory

Transistors Bipolar Bjt Single

Package

TO-226-3, TO-92-3 (TO-226AA)

Status

Active

$0.24 / unit (market reference)

MOQ: 1256 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
Model2SC1213AB-E
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
Power Dissipation (Max)400 mW
Supplier Device PackageTO-92
RoHSRoHS
Part StatusActive

Application & Notes

2SC1213AB-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max400 mW
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 15mA, 150mA
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 3V
Voltage - Collector Emitter Breakdown (Max)50 V

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