Microchip TechnologyTO-205AD, TO-39-3 Metal CanRoHS
2N6660
MOSFET N-CH 60V 410MA TO39
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-205AD, TO-39-3 Metal Can
Status
Active
$15.02 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | 2N6660 |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 3Ohm @ 1A, 10V |
| Vgs(th) (Max) | 2V @ 1mA |
| Input Capacitance (Ciss) | 50 pF @ 24 V |
| Power Dissipation (Max) | 6.25W (Tc) |
| Drive Voltage | 5V, 10V |
| Supplier Device Package | TO-39 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2N6660 by Microchip Technology is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-205AD, TO-39-3 Metal Can package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3Ohm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1A, 10V |
| Power Dissipation (Max) | 6.25W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 24 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 410mA (Ta) |
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